Fluctuation-induced current from freestanding graphene

P. M. Thibado, P. Kumar, Surendra Singh, M. Ruiz-Garcia, A. Lasanta, and L. L. Bonilla
Phys. Rev. E 102, 042101 – Published 2 October 2020

Abstract

At room temperature, micron-sized sheets of freestanding graphene are in constant motion, even in the presence of an applied bias voltage. We quantify the out-of-plane movement by collecting the displacement current using a nearby small-area metal electrode and present an Ito-Langevin model for the motion coupled to a circuit containing diodes. Numerical simulations show that the system reaches thermal equilibrium and the average rates of heat and work provided by stochastic thermodynamics tend quickly to zero. However, there is power dissipated by the load resistor, and its time average is exactly equal to the power supplied by the thermal bath. The exact power formula is similar to Nyquist's noise power formula, except that the rate of change of diode resistance significantly boosts the output power, and the movement of the graphene shifts the power spectrum to lower frequencies. We have calculated the equilibrium average of the power by asymptotic and numerical methods. Excellent agreement is found between experiment and theory.

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  • Received 2 June 2020
  • Revised 24 August 2020
  • Accepted 9 September 2020

DOI:https://doi.org/10.1103/PhysRevE.102.042101

©2020 American Physical Society

Physics Subject Headings (PhySH)

Statistical Physics & ThermodynamicsCondensed Matter, Materials & Applied PhysicsInterdisciplinary Physics

Authors & Affiliations

P. M. Thibado1,*, P. Kumar1, Surendra Singh1, M. Ruiz-Garcia2, A. Lasanta3,4, and L. L. Bonilla3,5,†

  • 1Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 2Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
  • 3G. Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics and Department of Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
  • 4Departamento de Álgebra, Facultad de Educación, Economía y Tecnología de Ceuta, Universidad de Granada, E-51001 Ceuta, Spain
  • 5Courant Institute for Mathematical Sciences, New York University, New York, New York 10012, USA

  • *Corresponding author: thibado@uark.edu
  • Corresponding author: bonilla@ing.uc3m.es

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Issue

Vol. 102, Iss. 4 — October 2020

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